Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

摘要

We theoretically demonstrate negative refraction and sub-wavelengthresolution below the diffraction limit in the UV and extreme UV ranges usingsemiconductors. The metal-like re-sponse of typical semiconductors such as GaAsor GaP makes it possible to achieve negative refraction and super-guiding inresonant semiconductor/dielectric multilayer stacks, similar to what has beendemonstrated in metallo-dielectric photonic band gap structures. Theexploita-tion of this basic property in semiconductors raises the possibilityof new, yet-untapped ap-plications in the UV and soft x-ray ranges.